dm n1004ufv document number: d s 38933 rev. 3 - 2 1 of 7 www.diodes.com january 2017 ? diodes incorporated d mn1004ufv 12v n - channel enhancement mode mosfet powerdi 3333 - 8 (type ux) product summary bv dss r ds(on) m ax i d m ax t c = + 25c 12v 3.8m ? @ v gs = 4.5v 70a 5.1 m ? @ v gs = 2 .5 v 55a description this mosfet is designed to minimize the on - state resistance (r ds (on) ), yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? power management functions ? dc - dc converters ? battery features ? low r ds(on) C e nsures on - s tate l osses are m inimized ? small f orm f actor t hermally e fficient p ackage e nables h igher d ensity e nd p roducts ? occupies just 33% of the b oard a rea o ccupied by so - 8 e nabling s maller e nd p roduct ? esd p rotected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: p ower di ? 3333 - 8 (type ux) ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 0 72 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm n 1004 u f v - 7 powerdi3333 - 8 (type ux) 2 , 0 00 /tape & reel dm n1004 u f v - 13 powerdi3333 - 8 (type ux) 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http : // www.diodes.com/products/packages.html . marking information equivalent circuit uf4 = product type marking code yyww = date code marking yy = last two digits of year (ex: 1 6 = 201 6 ) ww = week code (01 to 53) uf4 y yww top view bottom view s s s g d d d d pin1 powerdi is a registered trademark of diodes incorporated . d s g g ate protection diode esd protected
dm n1004ufv document number: d s 38933 rev. 3 - 2 2 of 7 www.diodes.com january 2017 ? diodes incorporated d mn1004ufv maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 12 v gate - source voltage v gss 8 v continuous drain current , v gs = 4.5 v (note 7 ) t c = +25c t a = +70c i d 70 a t c = + 70 c t a = +70c 50 pulsed drain curren t ( 380 dm 80 a maximum continuous body diode f orward current (note 7 ) i s 70 a avalanche current, l = 0.1mh (note 8 ) i as 34 a avalanche energy, l = 0.1mh (note 8 ) e as mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 0.9 w thermal resistance, junction to ambient (note 5 ) s teady s tate r ja 134 c/w total power dissipation (note 6 ) p d 1.9 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 66 c/w thermal resistance, junction to case (note 7 ) r j c 3.4 operating and storage temperature range t j, t stg - 55 to +15 0 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss 12 gs = 0v, i d = 250a dss ds = 9.6 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 9 ) gate threshold voltage v gs(th) 0. 3 ds = v gs , i d = 250 a ds(on) ? gs = 4.5 v, i d = 15 a gs = 2 .5v, i d = 10 a diode forward voltage v sd gs = 0v, i s = 3.2 a dynamic characteristics (note 10 ) input capacitance c iss ds = 6 v, v gs = 0v , f = 1mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 6 v, i d = 10 a total gate charge ( v gs = 8 v ) q g gs gd d( on ) dd = 6 v, v gs = 4.5 v, r g = 1 ? d = 5 a turn - on rise time t r d( off ) f rr f = 2 a, di/dt = 1 00a/s rr notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal bias to bottom layer 1 - inch square copper plate. 7. thermal re sistance from junction to soldering point (on the exposed drain pad). 8. i as and e as rating are based on low frequency and duty cycles to keep t j = + 25 c . 9 . short duration pulse test used to minimize self - heating effect. 10 . guaranteed by design. not subject to product testing.
dm n1004ufv document number: d s 38933 rev. 3 - 2 3 of 7 www.diodes.com january 2017 ? diodes incorporated d mn1004ufv 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 1.5 2 2.5 3 v = 2.5v gs v = 1v gs v = 1.5v gs v = 3v gs v = 4.5v gs v = 0.9v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 1.00 1.50 2.00 2.50 3.00 3.50 4.00 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 i = 15a d i = 10a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 1 2 3 4 5 0 5 10 15 20 25 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 v = 4.5v gs i = 15a d v = 2.5v gs i = 10a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm n1004ufv document number: d s 38933 rev. 3 - 2 4 of 7 www.diodes.com january 2017 ? diodes incorporated d mn1004ufv t j , junction temperature ( c ) figure 8. gate threshold variation vs. junction temperature 0 0.001 0.002 0.003 0.004 0.005 0.006 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 15a d v = 2.5v gs i = 10a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 100 1000 10000 0 2 4 6 8 10 12 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 v = 6v ds i = 5a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0.01 0.1 1 10 100 0.01 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j(m ax) t = 25c c v = 4.5v gs single pulse dut on 1 * mrp board i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm n1004ufv document number: d s 38933 rev. 3 - 2 5 of 7 www.diodes.com january 2017 ? diodes incorporated d mn1004ufv 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? ja ja r = 130c/w ? ja duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm n1004ufv document number: d s 38933 rev. 3 - 2 6 of 7 www.diodes.com january 2017 ? diodes incorporated d mn1004ufv package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version . powerdi3333 - 8 (type ux) suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version . powerdi3333 - 8 (type ux) powerdi3333 - 8 (type ux) dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 d 3.20 3.40 3.30 d1 2.95 3.15 3.05 d2 2.30 2.70 2.50 e 3.20 3.40 3.30 e1 2.95 3.15 3.05 e2 1.60 2.00 1.80 e2a 0.95 1.35 1.15 e2b 0.10 0.30 0.20 e 0.65 bsc k 0.50 0.90 0.70 l 0.30 0.50 0.40 0 12 10 all dimensions in mm dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 y4 0.540 d e e1 d1 a c l l e2b b e k d2 e2 a1 0 e2a x3 y3 x y c y1 y2 x1 x2 1 8 y4
dm n1004ufv document number: d s 38933 rev. 3 - 2 7 of 7 www.diodes.com january 2017 ? diodes incorporated d mn1004ufv important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreig n trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorpora ted products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incor porated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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